2 results
Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1430 / 2012
- Published online by Cambridge University Press:
- 25 May 2012, mrss12-1430-e03-16
- Print publication:
- 2012
-
- Article
- Export citation
Electrical Properties of TaOx Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 1250 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1250-G12-12
- Print publication:
- 2010
-
- Article
- Export citation