Skip to main content Accessibility help
×
Home

Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

  • Natsuki Fukuda (a1), Kazunori Fukuju (a1), Isamu Yogosawa (a1), Kazumasa Horita (a1), Shin Kikuchi (a1), Yutaka Nishioka (a1) and Koukou Suu (a1)...

Abstract

This paper describes proposal of ReRAM switching mechanism, development of production tool for ReRAM sputtering and improvement in TaOx-ReRAM switching characteristics. We propose that a ReRAM-cell has stack a structure in which an oxygen vacancy supply layer (TaOx) and an oxygen accumulation layer (Ta2O5) sandwiched by the top and bottom electrodes. Resistance change of the ReRAM-cell is caused by the oxygen vacancies migrating between the TaOx and the Ta2O5 layers by applied voltage. This prediction corresponded to the experimental facts. The thickness of Ta2O5 film sputtered by a mass production tool had good uniformity (±1.0%) and excellent stability (±1.0%). Also the sheet resistance uniformity (1σ) of TaOx film had 3.6%. By examining the sputtering conditions, the ReRAM-cell having a Ta2O5/TaOx bi-layer operated in less than 100μA with a forming-free and had excellent endurance property to 1010 cycles at 50nsec.

Copyright

References

Hide All
1. Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D.H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Dhung, U-In and Moon, J. T.. Tech. Dig. Int. Electron Devices Meet., San Francisco, 2004, 23, 6, p587
2. Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., Tiedke, S.. J. Appl. Phys. 98, pp033715 (2005)
3. Lee, Heng-Yuan, Chen, Pang-Shiu, Wang, Ching-Chiun, Maikap, Siddheswar, Tzeng, Pei-Jer, Lin, Cha-Hsin, Lee, Lurng-Shehng, and Tsai, Ming-Jinn. Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.288289
4. Suu, Koukou, Miyaguchi, Yusuke, Masuda, Takeshi, Nishioka, Yutaka and Chu, Fan. TECHNICAL REPORT OF IEICE. ED2000–69, SDM2000-69 (200-06), p49-56
5. Jimbo, Takehito, et al. ., Integrated Ferroelectrics, 2002, Vol. 40, pp.105112
6. Fukuda, Natsuki, et al. ., Mater. Res. Soc. Symp. Proc. Vol. 1250-G12-12, 2010 Materials Research Society
7. Joshua Yang, J., Zhang, M.-X., Pau Strachan, John, Miao, Feng, Pickett, Matthew D., Kelley, Ronald D., Medeiros-Ribeiro, G., and Stanley Williams, R.. Appl. Phys. Lett. 97, 232102 (2010)
8. Yoo, H. K., Lee, S. B., Lee, J. S., Chang, S. H., Yoon, M. J., Kim, Y. S., Kang, B. S., Lee, M.-J., Kim, C. J., Kahng, B., and Noh, T. W.. Appl. Phys. Lett. 98, 183507 (2011)

Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

  • Natsuki Fukuda (a1), Kazunori Fukuju (a1), Isamu Yogosawa (a1), Kazumasa Horita (a1), Shin Kikuchi (a1), Yutaka Nishioka (a1) and Koukou Suu (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed