3 results
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B10-02
- Print publication:
- 2006
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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B02-01
- Print publication:
- 2006
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Ion-beam-induced aggregation in polystyrene: The influence of the molecular parameters
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- Journal:
- Journal of Materials Research / Volume 3 / Issue 6 / December 1988
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1247-1252
- Print publication:
- December 1988
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