5 results
Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates
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- Journal:
- MRS Advances / Volume 1 / Issue 50 / 2016
- Published online by Cambridge University Press:
- 08 June 2016, pp. 3415-3420
- Print publication:
- 2016
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Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures
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- Journal:
- Journal of Materials Research / Volume 14 / Issue 7 / July 1999
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2794-2798
- Print publication:
- July 1999
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1.95 μm Compressively Strained Ingaas/Ingaasp Quantum Well DFB Laser With Low Threshold
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- Journal:
- MRS Online Proceedings Library Archive / Volume 484 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 643
- Print publication:
- 1997
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III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 129
- Print publication:
- 1996
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The Formation of Radiative Defects at GaAs/GaInP Interface
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- Journal:
- MRS Online Proceedings Library Archive / Volume 417 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 319
- Print publication:
- 1995
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