Skip to main content Accessibility help
×
Home

Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures

  • W. Liu (a1), M. F. Li (a1), K. L. Teo (a1), Nakao Akutsu (a2) and Koh Matsumoto (a2)...

Abstract

Room-temperature photovoltaic spectroscopy was applied to study undoped GaN, n-type GaN, and InGaN quantum well structures. Clear exciton absorption was observed in the photovoltaic spectra of the undoped GaN, and polarization measurements were made to identify the exciton absorption. For the n-type GaN sample, instead of the exciton absorption we observed only bulk absorption edge, which may be due to the free carrier screening effect. For the InGaN quantum well structures, the photovoltaic spectra showed relatively complicated line shape due to the overlap of the signals from different layers. By changing the reference phase of the lock-in amplifier, we were able to suppress some of the signals and thus identify the origin of the corresponding signal.

Copyright

References

Hide All
1.Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).
2.Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994).
3.Mohammad, S.N., Salvador, Arnel A., and Morkoc, H., Proc. IEEE 83, 1306 (1995).
4.Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., and Mukai, T., Jpn. J. Appl. Phys. 34, L1331 (1995).
5.Nakamura, S., Solid State Commun. 102, 237 (1997).
6.Burm, J., Schaff, W.J., Eastman, L.F., Amano, H., and Akasaki, I., Appl. Phys. Lett. 68, 2849 (1996).
7.Chen, G.D., Smith, M., Lin, J.Y., Jiang, H.X., Wei, S-H., Asif Kan, M., and Sun, C.J., Appl. Phys. Lett. 68, 2784 (1996).
8.Yeo, Y.C., Chong, T.C., and Li, M.F., J. Appl. Phys. 83, 1429 (1998).
9.Shan, W., Schmidt, T.J., Hauenstein, R.J., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 3492 (1995).
10.Choa, F.S., Fan, J.Y., Liu, P.L., Sipior, J., Rao, G., Carter, G.M., and Chen, Y.J., Appl. Phys. Lett. 69, 3668 (1996).
11.Reynolds, D.C., Look, D.C., Kim, W., Aktas, O., Botcharev, A., Salvador, A., Morkoc, H., and Talwar, D.N., J. Appl. Phys. 80, 594 (1996).
12.Tchounkeu, M., Briot, O., Gil, B., Alexis, J.P., and Aulombard, R.L., J. Appl. Phys. 80, 5352 (1996).
13.Binet, F., Duboz, J.Y., Rosencher, E., Scholz, F., and Harle, V., Phys. Rev. B 54, 8116 (1996).
14.Shikanai, A., Azuhata, T., Sota, T., Chichibu, S., Kuramata, A., Horino, K., and Nakamura, S., J. Appl. Phys. 81, 417 (1997).
15.Liu, W., Li, M.F., Chua, S.J., Zhang, Y.H., and Uchida, K., Appl. Phys. Lett. 71, 2511 (1997).
16.Sterge, M.D., Phys. Rev. 127, 68 (1962).
17.Merz, C., Kunzer, M., Kaufmann, U., Akasaki, I., and Amano, H., Semicond. Sci. Technol. 11, 712 (1996).
18.Volm, D., Oettinger, K., Streibl, T., Kovalev, D., Ben-Chorin, M., Diener, J., Meyer, B.K., Majewski, J., Eckey, L., Hoffmann, A., Amano, H., Akasaki, I., Hiramatsu, K., and Detchprohm, T., Phys. Rev. B 53, 16543 (1996).
19.Dingle, R., Sell, D.D., Stokowski, S.E., Dean, P.J., and Zetterstrom, R.B., Phys. Rev. B 3, 497 (1971).
20.Hopfield, J.J., J. Phys. Chem. Solids 15, 97 (1960).
21.Chichibu, S., Azuhata, T., Sota, T., Amano, H., and Akasaki, I., Appl. Phys. Lett. 70, 2085 (1997).
22.Haug, H. and Koch, S.W., Quantum Theory of the Optical and Electronic Properties of Semiconductors (World Scientific, Singapore, 1990), p. 148.
23.Tyan, S.L., Wang, Y.C., Hwang, J.S., and Shen, H., Appl. Phys. Lett. 68, 3452 (1996).
24.Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).
25.O'Donnell, K.P., Breitkopf, T., Kalt, H., Van der Stricht, W., Moerman, I., Dimeester, P., and Middleton, P.G., Appl. Phys. Lett. 70, 1843 (1997).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed