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Interface State Densities for SiNx: H on Cleaved GaAs and InP(110)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 573 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 253
- Print publication:
- 1999
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Properties of Gate-Quality SiO2 Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultrahigh Vacuum Processing System
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- Journal:
- MRS Online Proceedings Library Archive / Volume 386 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 255
- Print publication:
- 1995
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Effect of Power on the Properties of SiO2 Films Produced by Plasma-Enhanced Chemical Vapour Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 338 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 57
- Print publication:
- 1994
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