Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-20T12:15:34.888Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface State Densities for SiNx: H on Cleaved GaAs and InP(110)

Published online by Cambridge University Press:  10 February 2011

D. Landheer ,
J. E. Hulse  and
K. Rajesh
D. Landheer
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIR 0R6, dolf.landheer@nrc.ca
J. E. Hulse
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIR 0R6, dolf.landheer@nrc.ca
K. Rajesh
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada KIR 0R6, dolf.landheer@nrc.ca
Get access

Abstract

Silicon nitride was deposited in-situ by electron-cyclotron resonance plasma chemical-vapour deposition (ECR-CVD) on (110) surfaces formed by cleaving GaAs and InP(100) substrates in an ultra-high vacuum processing system. Capacitors formed by depositing Al gates on the facet surfaces were analyzed by the high-low frequency capacitance-voltage (CV) technique. The minimum interface-state densities obtained for the cleaved GaAs (110) surfaces were 1–2 × 1012 eV−1cm−2. For cleaved InP facets the measured minimum interface state densities were a factor of two higher; however, they exhibited a smaller hysteresis in the CV characteristics and a smaller modulation in the surface potential. The interface state densities did not change significantly for the GaAs(110) facets if a Si interface control layer 0.8–2 nm thick was deposited prior to silicon nitride deposition; however, a larger effect was observed for the hysteresis and flatband voltage shift of the CV characteristics. The effect of annealing on the interfaces with Si was investigated and the performance compared with published results for GaAs(100) surfaces prepared by molecular-beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 253
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tang, W.C., Rosen, H.J., Vettiger, P. and Webb, D.J., Appl. Phys. Lett. 59, 1005 (1991).Google Scholar
2. Adamowicz, B. and Hasegawa, H., Jpn. J. Appl. Phys. 37, 1631 (1998).Google Scholar
3. Landheer, D., Lu, Z.-H., Baribeau, J.-M., Huang, L. J., and Lau, W. M., J. Electron. Mat. 23, 943 (1994).Google Scholar
4. Landheer, D., Rajesh, K., Hulse, J.E., Sproule, G.I., McCaffrey, J., Quance, T., and Graham, M.J., to be published.Google Scholar
5. Hasegawa, H. and Ohno, H., J. Vac. Sci. Technol. B 4, 1130 (1986).Google Scholar
6. Huang, L.J., Rajesh, K., Lau, W.M., Wu, X.Z., Landheer, D., Baribeau, J.-M., and Ingrey, S., Appl. Phys. Lett. 71, 237 (1997).Google Scholar
7. Park, D.G., Chen, Z., Botchkarev, A.E., Mohammad, S.N. and Morkog, H., Phil. Mag. B 74, 219 (1996).Google Scholar
8. Hong, M., Passlack, M., Mannaerts, J. P., Kwo, J., Chu, S. N. G., Moriya, N., Hou, S. Y., and Fratello, V. J., J. Vac. Sci. Technol. B 14, 2297 (1996).Google Scholar
9. Landheer, D., Hulse, J.E., and Quance, T., Thin Solid Films 293, 52 (1997).Google Scholar
10. Chamberlain, J.P., The adsorption of carbon monoxide on silicon and gallium arsenide surfaces, p. 29, PhD Dissertation, Georgia Institute of Technology. (1993).Google Scholar
11. Lu, Z.-H. and Baribeau, J.-M., Appl. Phys. Lett. 70, 1989 (1997).Google Scholar
12. Landheer, D., Rajesh, K., Masson, D.P., Hulse, J.E., Sproule, G.I., and Quance, T., J. Vac. Sci. Technol A 16 2931 (1998).Google Scholar
13. R. Castagné and Vapaille, A., Surface Sci. 28, 157 (1971).Google Scholar
14. Hashizume, T., Ikeya, K., Mutoh, M., and Hasegawa, H., Applied Surface Science 123/124, 599 (1998).Google Scholar
15. Landheer, D., Yousefi, G.H., and Webb, J.B., J. Appl. Phys. 75, 3516 (1994).Google Scholar
16. Garcia, S., Martil, I., Diaz, G. Gonzalez, Castan, E., Duenas, S., and Fernandez, M., J. Appl. Phys. 83, 600 (1998).Google Scholar
17. Park, D.G., Tao, M., Reed, J., Suzue, K., Botchkarev, A.E., Fan, Z., Gao, G.B., Chey, S.J., Van Nostrand, J., Cahill, D.G., and Morkoç, H.;, J. Cryst. Growth 150, 1275 (1995).Google Scholar