2 results
Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 149-153
- Print publication:
- July 2004
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On the Influence of Laser Beam Homogenity on the Regrowth of Ion Implanted Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 4 / 1981
- Published online by Cambridge University Press:
- 15 February 2011, 299
- Print publication:
- 1981
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- Article
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