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Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing

Published online by Cambridge University Press:  15 July 2004

D. Klinger ,
J. Auleytner ,
D. Żymierska ,
B. Kozankiewicz ,
A. Barcz ,
L. Nowicki  and
A. Stonert
D. Klinger
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warsaw, Poland
J. Auleytner
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warsaw, Poland
D. Żymierska*
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warsaw, Poland
B. Kozankiewicz
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warsaw, Poland
A. Barcz
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02 668 Warsaw, Poland
L. Nowicki
Affiliation:
Soltan Institute for Nuclear Studies, ul. Hoża 69, PL-00 681 Warsaw, Poland
A. Stonert
Affiliation:
Soltan Institute for Nuclear Studies, ul. Hoża 69, PL-00 681 Warsaw, Poland
*
zymier@ifpan.edu.pl
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Abstract

The influence of the laser annealing on the defect structure of the near-surface layer of silicon crystal implanted with 40 keV Ge ions is reported. Evolution of defect structure during nanosecond pulse laser annealing is characterised by means of several complementary methods: reflection high-energy electron diffraction, interference-polarizing microscopy, Rutherford back-scattering and secondary ion mass spectrometry. Regions irradiated with different energy densities of the laser beam are compared. The role of the dopant in the layer recrystallised from the melt is discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 149 - 153
Copyright
© EDP Sciences, 2004

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