2 results
Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1069 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1069-D05-03
- Print publication:
- 2008
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- Article
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Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B02-02
- Print publication:
- 2006
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- Article
- Export citation