Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-23T21:03:06.295Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

Published online by Cambridge University Press:  01 February 2011

Yaroslav Koshka ,
Bharat Krishnan ,
Huang-De Lin  and
Galyna Melnychuk
Yaroslav Koshka
Affiliation:
ykoshka@ece.msstate.edu, Mississippi State University, Electrical and Computer Engineering, 216 Simrall Hall, Mississippi State, 39762, United States
Bharat Krishnan
Affiliation:
bk42@ece.msstate.edu, Mississippi State University, Department of Electrical and Computer Engineering, Mississippi State, MS, 39762, United States
Huang-De Lin
Affiliation:
hhl1@ece.msstate.edu, Mississippi State University, Department of Electrical and Computer Engineering, Mississippi State, MS, 39762, United States
Galyna Melnychuk
Affiliation:
gm2@ece.msstate.edu, Mississippi State University, Department of Electrical and Computer Engineering, Mississippi State, MS, 39762, United States
Get access

Abstract

Low-temperature homoepitaxial growth of 4H-SiC using halo-carbon precursors was further investigated to address the problems limiting increase of the growth rate of the defect-free epilayers at growth temperatures below 1300°C. Enhanced etching of Si clusters in the gas phase was achieved by adding HCl during the low-temperature growth. The effective Si/C ratio above the growth surface was increased as a result of reduced depletion of silicon vapor species by cluster condensation, which resulted in drastically improved epilayer morphology and significant increase of the growth rate. An intentional insitu nitrogen doping of epitaxial layers during 1300°C growth on Si and C faces revealed more than an order of magnitude higher nitrogen donor incorporation in the C-face epitaxial layers. Finally, a feasibility of selective epitaxial growth using low-temperature masking materials such as SiO2 was demonstrated.

Keywords

epitaxychemical vapor deposition (CVD) (deposition)Cl
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B02-02
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Koshka, Y., Lin, H. De, Melnychuk, G., Wood, C., International Conference on Silicon Carbide and Related Materials, Pittsburgh, September 2005.Google Scholar
2 Koshka, Y., Lin, H. De, Melnychuk, G., Wood, C., submitted to the J. of Crystal Growth. Google Scholar
3 Myers, R., Kordina, O., Shishkin, Z., Rao, S., Everly, R., Saddow, S.E., Mater. Sci. Forum, 483–485 (2005), pp. 73–76.Google Scholar
4 Crippa, D., Valente, G.L., Ruggiero, R., Neri, L., et. al., Mater. Sci. Forum, 483–485 (2005), pp. 67–72.Google Scholar
5 Forsberg, U., Danielsson, Ö., Henry, A., Linnarsson, M.K., Janzén, E., Journal of Crystal Growth, 236 (2002), pp.101–112.Google Scholar
6 Rurali, R., Godignon, P., and Rebollo, J., Appl. Phys. Lett. 82, 4298 (2003).Google Scholar
7 Los, Andrei V., and Mazzola, Michael S., J. of Electronic Materials, Vol.30, No.3 (2001), pp. 235–241.Google Scholar