10 results
Observation of layer by layer graphitization of 4H-SiC, through atomic-EELS at low energy
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- Journal:
- Microscopy and Microanalysis / Volume 20 / Issue S3 / August 2014
- Published online by Cambridge University Press:
- 27 August 2014, pp. 560-561
- Print publication:
- August 2014
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Atomic Scale Imaging and Energy Loss Spectroscopy of Epitaxial Graphene
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1714 / 2014
- Published online by Cambridge University Press:
- 03 September 2014, mrss14-1714-ddd05-07
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- 2014
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Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 27 November 2012, pp. 104-112
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- 14 January 2013
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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 24 July 2012, pp. 129-135
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- 14 January 2013
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Single Shockley Faults Evolution Under UV Optical Pumping
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-06
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- 2010
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Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-04
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- 2010
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Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B03-07
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- 2010
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Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 810 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, C5.5
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- 2004
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Monte Carlo Analysis of the Evolution from Point to Extended Interstitial Type Defects in Crystalline Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 610 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, B11.5
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- 2000
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The Role of Cluster Size and Topology on the Ripening of Defect Aggregates in Crystalline Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 538 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 241
- Print publication:
- 1998
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