6 results
Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1396 / 2012
- Published online by Cambridge University Press:
- 16 January 2012, mrsf11-1396-o07-27
- Print publication:
- 2012
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Polarity dependence of In-rich InGaN and InN/InGaN MQWs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF06-03
- Print publication:
- 2005
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RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E4.4
- Print publication:
- 2004
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MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison between N-polarity and In-polarity Growth Processes
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E4.1
- Print publication:
- 2004
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Acceptor Concentration Control of p-ZnSe using N2+He Gas Plasma by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 340 / 1994
- Published online by Cambridge University Press:
- 22 February 2011, 437
- Print publication:
- 1994
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Effects of Substrate Materials on Ar Ion Laser-Assisted Movpe of Znse Using DMZn and DMSe as Reactants
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- Journal:
- MRS Online Proceedings Library Archive / Volume 221 / 1991
- Published online by Cambridge University Press:
- 25 February 2011, 117
- Print publication:
- 1991
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