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Effects of Substrate Materials on Ar Ion Laser-Assisted Movpe of Znse Using DMZn and DMSe as Reactants

Published online by Cambridge University Press:  25 February 2011

Akihiko Yoshikawa  and
Tamotsu Okamoto
Akihiko Yoshikawa
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering Chiba University, 1–33 Yayoi-cho, Chiba-shl, Chiba 260, Japan
Tamotsu Okamoto
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering Chiba University, 1–33 Yayoi-cho, Chiba-shl, Chiba 260, Japan
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Abstract

Effects of substrate materials and their properties on photoassisted MOVPE of ZnSe using DMZn and DMSe as reactants have been investigated. For GaAs substrates, the presence of a thin predeposited ZnSe buffer layer and its quality greatly affect the subsequent film growth. However, for InP substrates, no essential effect of the buffer layer has been observed. Furthermore, in both substrates, the conduction type makes no significant difference to the results of photoassisted MOVPE. These results can be interpreted by a proposed growth model in which photoinduced excess holes In the ZnSe layer contribute to the film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 117
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Fujita, Sg., Tanabe, A., Sakamoto, T., Isemura, M. and Fujita, Sz.: Jpn. J. Appl. Phys. 26 (1987) L2000.Google Scholar
[2] Fujita, Sz., Tanabe, A., Sakamoto, T., Isemura, M. and Fujita, Sg.: J. Cryst. Growth 93 (1988) 259.CrossRefGoogle Scholar
[3] Fujita, Sz., Takeuchi, F. Y. and Fujita, Sg.: Jpn. J. Appl. Phys. 27 (1988) L2019.Google Scholar
[4] Yasuda, T., Koyama, Y., Wakitani, J., Yoshino, J. and Kukimoto, H.: Jpn. J. Appl. Phys. 28 (1989) L1628.Google Scholar
[5] Yoshikawa, A., Okamoto, T., Fujimoto, T., Onoue, K., Haseyama, K., Yamaga, S. and Kasai, H.: Proc. SPIE Symp. on Laser / Optical Processing of Electronic Materials (SPIE, Washington, USA, 1989) Vol.1190, p.25.Google Scholar
[6] Yoshikawa, A., Okamoto, T., Fujimoto, T., Onoue, K., Yamaga, S. and Kasai, H.: Jpn. J. Appl. Phys. 29 (1990) L225.Google Scholar
[7] Yoshikawa, A., Okamoto, T. and Fujimoto, T.: J. Cryst. Growth 107 (1991) 653.Google Scholar
[8] Yoshikawa, A., Yamaga, S., Tanaka, K., Oniyama, H. and Kasai, H.: Extended Abstracts 17th Conf. Solid State Devices & Materials (Business Center for Academic Societies Japan, Tokyo, 1985) p.229.Google Scholar
[9] Houten, H. van, Colak, S., Marshall, T. and Cammack, A.: J. Appl. Phys. 66 (1989) 3047.Google Scholar
[10] Hasegawa, H., He, L.. Ohno, H., Sawada, T., Haga, T., Abe, Y. and Takahashi, H.: J. Vac. Sci. & Technol. B5 (1987) 1097.Google Scholar
[11] Kobayashi, N.: Appl. Phys. Lett. 55 (1989) 1235.Google Scholar
[12] Yamamoto, A., Yamaguchi, M. and Uemura, C.: IEEE Trans. Electron Devices ED–32 (1985) 2780.Google Scholar