5 results
Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 584-590
- Print publication:
- 2000
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MBE Growth of GaN using NH3 and Plasma Sources
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G6.56
- Print publication:
- 2000
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Generation Recombination Noise in GaN Photoconducting Detectors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 817-822
- Print publication:
- 1999
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Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.2
- Print publication:
- 1999
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Generation Recombination Noise in GaN Photoconducting Detectors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G7.8
- Print publication:
- 1998
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