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Preface

Published online by Cambridge University Press:  05 June 2012

Kevin F. Brennan
Affiliation:
Georgia Institute of Technology
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Summary

The maturation of epitaxial crystal growth capabilities, such as molecularbeam epitaxy and chemical beam epitaxy, has enabled the realization of a host of new ultrasmall semiconductor devices. Aside from the feature size reduction of conventional semiconductor devices, particularly transistors, a totally new class of semiconductor devices has been invented. These structures, called superlattices/multiple-quantum-well devices, consist of alternating layers of different semiconductor materials, often measuring only a few atomic layers thick. These new semiconductor devices operate well within the range in which quantum-mechanical phenomena become prevalent. As a consequence, most new semiconductor devices behave according to quantum-mechanical effects rather than classical effects. Therefore the understanding of these new device types requires a firm grounding in the basics of quantum mechanics. It is the purpose of this book to introduce the engineering student, particularly those interested in studying solid-state devices, to the principles of quantum mechanics, statistical mechanics, and solid-state physics. Following this introduction, the physics of semiconductors and various device structures is examined.

The book contains fourteen chapters in total. The first four chapters are concerned with the standard principles of quantum mechanics for a one-particle system. I have attempted to condense the vast literature on this subject into just four chapters that will present the salient features of quantum mechanics. I have included a few topics, most notably a short presentation on relativistic quantum mechanics, for completeness. The instructor may elect to skip different sections as he or she sees fit.

Type
Chapter
Information
The Physics of Semiconductors
With Applications to Optoelectronic Devices
, pp. xi - xiv
Publisher: Cambridge University Press
Print publication year: 1999

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  • Preface
  • Kevin F. Brennan, Georgia Institute of Technology
  • Book: The Physics of Semiconductors
  • Online publication: 05 June 2012
  • Chapter DOI: https://doi.org/10.1017/CBO9781139164214.001
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  • Preface
  • Kevin F. Brennan, Georgia Institute of Technology
  • Book: The Physics of Semiconductors
  • Online publication: 05 June 2012
  • Chapter DOI: https://doi.org/10.1017/CBO9781139164214.001
Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

  • Preface
  • Kevin F. Brennan, Georgia Institute of Technology
  • Book: The Physics of Semiconductors
  • Online publication: 05 June 2012
  • Chapter DOI: https://doi.org/10.1017/CBO9781139164214.001
Available formats
×