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2 - Single semiconductor quantum dots in nanowires: growth, optics, and devices

from Part I - Nanostructure design and structural properties of epitaxially grown quantum dots and nanowires

Published online by Cambridge University Press:  05 August 2012

By
M. E. Reimer ,
N. Akopian ,
M. Barkelid ,
G. Bulgarini ,
R. Heeres ,
M. Hocevar ,
B. J. Witek ,
E. P. A. M. Bakkers  and
V. Zwiller
Edited by
Alexander Tartakovskii
M. E. Reimer
Affiliation:
Delft University of Technology, The Netherlands
N. Akopian
Affiliation:
Delft University of Technology, The Netherlands
M. Barkelid
Affiliation:
Delft University of Technology, The Netherlands
G. Bulgarini
Affiliation:
Delft University of Technology, The Netherlands
R. Heeres
Affiliation:
Delft University of Technology, The Netherlands
M. Hocevar
Affiliation:
Delft University of Technology, The Netherlands
B. J. Witek
Affiliation:
Delft University of Technology, The Netherlands
E. P. A. M. Bakkers
Affiliation:
Delft University of Technology, The Netherlands
V. Zwiller
Affiliation:
Delft University of Technology, The Netherlands
Alexander Tartakovskii
Affiliation:
University of Sheffield
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Summary

Introduction

Quantum dots have proven to be exciting systems to study light-matter interaction [32, 9]. Self-assembled quantum dots obtained by the Stranski–Krastanow growth mode have been the main system to date [32, 9]. Here we introduce a new type of quantum dot embedded in a one-dimensional nanowire. Quantum dots in nanowires offer a range of advantages over strain-driven Stranski–Krastanov quantum dots. In the case of quantum dots in nanowires, the light extraction efficiency can be very high for the quantum dot emission due to a waveguide effect in the nanowire [14, 45], theoretically approaching 100% according to simulations [14]. Since strain is not the driving mechanism during growth, unprecedented material freedom is available to the quantum engineer in the choice of materials for the quantum dot and the barrier material. At the scale of nanowires, both zincblende and wurtzite crystal structures can coexist, opening the door to a new type of confinement based not only on the material composition, but also on the phase of the crystal lattice [1]. The ability to electrically contact a single nanowire implies that all the current injected in a nanowire will flow through a single quantum dot, enabling an efficient interface between single electrons and single photons [33, 44]. In addition, electrostatic gating is highly versatile, allowing for coherent spin manipulation [36], charge state control [54], and the ability to control the exciton–biexciton splitting by an in-plane electric field [43].

Type
Chapter
Information
Quantum Dots
Optics, Electron Transport and Future Applications
 , pp. 21 - 40
Publisher: Cambridge University Press
Print publication year: 2012

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