Ferroelectric (FE) films, especially PZT films, have received increasing
attention for microelectronics applications such as FE memory and in high
density DRAM's. While rare earth doped PbTiO3 ceramics has been
studied for SAW and piezoelectric applications, rare earth-doped films
seldom have been systematically explored. A series of sol-gel derived
PbTiO3 films with varying amounts (5-15 mole %) of rare earths
(such as, Nd, Sm, Tb, Dy, Er ,Yb and La ) have been prepared using acetates
and alkoxides as precursors. The solutions were spin coated onto platinized
Si wafers. The effects of the type and amount of rare incorporation on the
phase assembly and microstructure have been quantified. The results of
dielectric characterization (e.g., dielectric constant, dissipation factor
and leakage currents) and FE behaviors (viz remanent polarization, and
coercive field) are presented; these films exhibited low leakage currents
(3E-10 A/cm2) and much higher dielectric constant (up to 525)
compared to undoped PbTiO3 films.