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Zirconium Mediated Hydrogen Outdiffusion from p-GaN

  • E. Kaminska (a1), A. Piotrowska (a1), A. Barcz (a1) (a2), J. Jasinski (a3), M. Zielinski (a2), K. Golaszewska (a1), R.F. Davis (a4), E. Goldys (a5) and K. Tomsia (a5)...

Abstract

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

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Zirconium Mediated Hydrogen Outdiffusion from p-GaN

  • E. Kaminska (a1), A. Piotrowska (a1), A. Barcz (a1) (a2), J. Jasinski (a3), M. Zielinski (a2), K. Golaszewska (a1), R.F. Davis (a4), E. Goldys (a5) and K. Tomsia (a5)...

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