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Thermal Stress During Zone-Melting-Recrystallization of Silicon on Insulator Films: The Origin of Subboundaries and In-Plane Orientation of SOI

Published online by Cambridge University Press:  28 February 2011

J.M. Gibson ,
L.N. Pfeiffer ,
K.W. West  and
D.C. Joy
J.M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L.N. Pfeiffer
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K.W. West
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D.C. Joy
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The effect of thermal stress during zone-melting recrystallization of silicon on insulator films is considered. New experimental results from graphite-strip heated films are drawn upon. It is found that low-angle grain boundaries exhibit an inverse dependence between spacing and tilt angle. This is explained semiquantitatively by a model in which thermal stress induced film buckling is responsible for the existence of low-angle grain boundaries. It is also suggested that the predominance of the <100> orientation in these films is partly due to thermal stress and the elastic anisotropy of silicon. Thus thermal stress is proposed as the origin of the two major features of zone-melted films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 289
Copyright
Copyright © Materials Research Society 1986

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References

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