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Thermal Expansion of GaN at Low Temperatures - a Comparison of Bulk and Homo- and Heteroepitaxial Layers

Published online by Cambridge University Press:  03 September 2012

Verena Kirchner ,
Heidrun Heinke ,
Sven Einfeldt ,
Detlef Hommel ,
Jaroslaw Z. Domagala  and
Michal Leszczynski
Verena Kirchner
Affiliation:
University of Bremen, Institute of Solid State Physics, Bremen, Germany
Heidrun Heinke
Affiliation:
University of Bremen, Institute of Solid State Physics, Bremen, Germany
Sven Einfeldt
Affiliation:
University of Bremen, Institute of Solid State Physics, Bremen, Germany
Detlef Hommel
Affiliation:
University of Bremen, Institute of Solid State Physics, Bremen, Germany
Jaroslaw Z. Domagala
Affiliation:
Polish Academy of Science, Institute of Physics, Dept. of X-ray Studies and Electron Microscopy, Warsaw, Poland
Michal Leszczynski
Affiliation:
High Pressure Research Center, Unipress, Warsaw, Poland
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Abstract

The thermal expansion of different GaN samples is studied by high-resolution Xray diffraction within the temperature range of 10 to 600 K. GaN bulk crystals, a homoepitaxial layer and different heteroepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated. Below 100 K the thermal expansion coefficients (TEC) were found to be nearly zero which has to be taken into account when estimating the thermal strain of GaN layers in optical experiments commonly performed at low temperatures. The homoepitaxial layer and the underlying GaN substrate with a lattice mismatch of –6×10−4 showed identical thermal expansion. The comparison between the temperature behavior of lattice parameters of heteroepitaxial layers and bulk GaN points to a superposition of thermally induced biaxial strain and compressive hydrostatic strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W5.7
Copyright
Copyright © Materials Research Society 1999

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