Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-22T04:38:45.963Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress and Resistivity in Reactively Sputtered Amorphous Metallic Ta-Si-N Films

Published online by Cambridge University Press:  26 February 2011

C.-K. Kwok ,
E. Kolawa ,
M-A. Nicolet  and
Ray C. Lee
C.-K. Kwok
Affiliation:
California Institute of Technology, Pasadena, CA 91125
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Ray C. Lee
Affiliation:
University of Wisconsin-Milwaukee, Milwaukee, WI 53201
Get access

Abstract

We have measured the stress and the electrical resistivity of Ta-Si-N films deposited in an rf magnetron system by reactive sputtering of Ta5 Si3 target in an Ar-N2 mixture. The stress was determined by measuring the curvature of thin Si substrates with a stylus instrument. The atomic composition was established from backscattering spectra. The resistivity was derived from four-point probe measurements. The stress, the resistivity, and the atomic composition were studied as a function of various processing parameters (total pressure, gas composition). The stress is always compressive and can be changed from 0.38 - 1.48 GPa by such means. The resistivity is principally a function of the nitrogen composition and rises as the nitrogen amount increases. The results are compared with those reported for other amorphous metallic alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 261
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kolawa, E., Molarius, J.M., Nieh, C. W. and Nicolet, M.-A., J. Vac. Sci. Technol., A8, 3006 (1990).Google Scholar
2. Kolawa, E., Pokela, P.J., Reid, J., Chen, J.S. and Nicolet, M.-A., IEEE Electron Device Letters, (in press).Google Scholar
3. Pokela, P. J., Kolawa, E., Ruiz, R. and Nicolet, M.-A., Thin Solid Films, (in press).Google Scholar
4. Suni, I., Maenpaa, M., Nicolet, M.-A., and , Luomajarvi, J. Electrochem. Soc., 130, 1215 (1983).Google Scholar
5. Kattelus, H. P., Tandon, J. L., Sala, C. and Nicolet, M.-A., J. Vac. Sci. Technol., A4, 1850 (1986).Google Scholar
6. Kanamori, Shuichi, Thin Solid Films, 136, 195 (1986).Google Scholar
7. Ahn, K. Y., Wittmer, M. and Ting, C. Y., Thin Solid Films, 107, 45 (1983).Google Scholar
8. Glang, R., Holmwood, R. A. and Rosenfeld, R. L., Rev. Sci. Instrum., 36, 7 (1965).Google Scholar
9. Kolawa, E., So, F. C. T., Zhao, X.-A. and Nicolet, M.-A., The Proceedings of the Second Workshop on Tungsten and other Refractory Metals for VLSI Applications, MRS, 1986.Google Scholar
10. So, F. C. T., Kolawa, E., Nieh, S. C. W., Zhao, X.-A. and Nicolet, M.-A., Appl. Phys., A45, 265 (1988).Google Scholar
11. Kolawa, E., So, F. C. T., Flick, W., Zhao, X.-A., Pan, E. T.-S., and Nicolet, M.-A., Thin Solid Films, 173, 217 (1989).Google Scholar
12. Leamy, H. J. and Dirks, A. G., J. Appl. Phys., 49(6), 3430 (1978).Google Scholar
13. Thomas, R. E., Perepezko, J. H. and Wiley, J.D., J. Vac. Sci. Technol., A8, 885 (1990).Google Scholar
14. D'Heurle, F. M. and Harper, J. M. E., Thin Solid Films, 171, 81 (1989).Google Scholar