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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN

Published online by Cambridge University Press:  03 September 2012

M. Benamara ,
Z. Liliental-Weber ,
J.H. Mazur ,
W. Swider ,
J. Washburn ,
M. Iwaya ,
I. Akasaki  and
H. Amano
M. Benamara
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, 62/203
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, 62/203
J.H. Mazur
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, 62/203
W. Swider
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, 62/203
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720, 62/203
M. Iwaya
Affiliation:
Meijo University, Dept. of Electrical and Electronic Engineering, 1-501 Shiogamaguchi, Tempaku ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
Meijo University, Dept. of Electrical and Electronic Engineering, 1-501 Shiogamaguchi, Tempaku ku, Nagoya 468-8502, Japan
H. Amano
Affiliation:
Meijo University, Dept. of Electrical and Electronic Engineering, 1-501 Shiogamaguchi, Tempaku ku, Nagoya 468-8502, Japan
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Abstract

Successive growth of thick GaN layers separated by either LT-GaN or LT-AlN interlayers have been investigated by transmission electron microscopy techniques. One of the objectives of this growth method was to improve the quality of GaN layers by reducing the dislocation density at the intermediate buffer layers that act as barriers to dislocation propagation. While the use of LT-AlN results in the multiplication of dislocations in the subsequent GaN layers, the LT-GaN reduces dislocation density. Based upon Burgers vector analysis, the efficiency of the buffer layers for the propagation of the different type of dislocations is presented. LT-AlN layer favor the generation of edge dislocations, leading to a highly defective GaN layer. On the other hand, the use of LT-GaN as intermediate buffer layers appears as a promising method to obtain high quality GaN layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W5.8
Copyright
Copyright © Materials Research Society 1999

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References

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