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Relaxation of Thermal Stresses in Al-Films

Published online by Cambridge University Press:  26 February 2011

H.G. Bohn ,
W. Pill ,
K.-H Robrock  and
W. Schilling
H.G. Bohn
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 5170 Jülich, Federal Republic of Germany
W. Pill
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 5170 Jülich, Federal Republic of Germany
K.-H Robrock
Affiliation:
Now at: Commission of the European Communities, Brussels
W. Schilling
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, 5170 Jülich, Federal Republic of Germany
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Abstract

The time and temperature dependent mechanisms underlying the relaxation of thermally induced stresses in Al-films on quartz substrates have been investigated for film thicknesses in the range between 0.4 and 4.2 μm. Film stresses were determined by a high resolution capacitive technique from the bending displacement of the specimens. By employing a lamp furnace heating rates of 10°C/sec could be achieved. This test equipment allowed the investigation of thermally induced film stresses between room temperature and 450°C and in the time range between 10 sec and several hours. Similar temperature programms were run in situ in a scanning electron microscope in order to observe the concommitant changes of the surface morphologies.

The experiments show that a major fraction of 50 to 70% of the thermal stress recovers instantaneously by plastic flow. This defines a yield stress for the Al-films which is found to be inversely proportional to the film thickness and to vary linearly with temperature. The magnitude of the yield strength under tension is larger by a factor 1.7 compared to that under compression.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 226: Symposium H – Mechanical Behavior of Materials and Structures in Microelectronics , 1991 , 255
Copyright
Copyright © Materials Research Society 1991

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