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Optimization of Post Sulfuric Acid/Hydrogen Peroxide Dump Rinsing Processes

Published online by Cambridge University Press:  10 February 2011

R. P. Chiarello
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
R. Parker
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305 Hewlett Packard, 3500 Deer Creek Rd., Palo Alto, CA
C. R. Helms
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
W. Chen
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
S. Tang
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
L. J. Cook
Affiliation:
Stanford University, Electrical Engineering Department, Stanford, CA 94305
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Abstract

We evaluated the rate limiting steps in a post sulfuric acid/hydrogen peroxide mix dump rinsing process. The parameters we examined include, the pull-out velocity from the chemical bath, the draining during transport into the rinse tank, immersion into the rinse tank, dumping, draining after a dump cycle and flow rate during fills between dumps. Based on our investigations an optimized dump rinsing process was developed using programmed flow rates and dumping cycles. The quality of the optimized rinsing process was determined by measuring sulfur residue and light point defects on wafer surfaces that had undergone the optimized rinsing process. This optimized process requires 5 minutes and 75 liters of water, replacing a process that initially ran for up to 16 minutes and consumed 600 liters of water. Our optimized rinsing process, resulted in a factor of five saving in water consumption and two in cycle lifetime with no statistical degradation in surface quality.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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Footnotes

*

National Semiconductor Corp., 2900 Semiconductor Dr. Santa Clara, CA 95052

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