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Nucleation and Growth of {113} Defects and {111} Dislocation Loops Insilicon-Implanted Selicon

Published online by Cambridge University Press:  15 February 2011

G. Z. Pan  and
K. N. Tu
G. Z. Pan
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095–1595
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095–1595
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Abstract

Plan-view and cross-sectional transmission electron microscopy have been used to study the microstructural characterization of the nucleation and growth behavior of {113} rodlike defects, as well as their correlation with {111} dislocation loops in silicon amorphized with 50 keV, 36×1014 Si/cm2, 8.0 mAand annealed by rapid thermal anneals at temperatures from 500 °C to 1100 °C for various times. We found that the nucleations of the {113} rodlike defects and {111} dislocation loops are two separate processes. At the beginning of anneals, excess interstitials accumulate and form circular interstitial clusters at the preamorphous/crystalline interface at as low as 600 °C for 1 s. Then these interstitial clusters grow along the <110> direction to form {113} rodlike defects. Later, while the {113} defects have begun to grow and/or dissolve into matrix, the {111} faulted Frank dislocation loops start to form. We also found that the initial interstitial clusters prefer to grow along the <110>directions inclined to the implantation surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 431
Copyright
Copyright © Materials Research Society 1997

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References

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