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Ni Removal from Si Wafers by Low-Pressure UV-Chlorine Cleaning

Published online by Cambridge University Press:  10 February 2011

C. H. Courtney  and
H. H. Lamb
C. H. Courtney
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905.
H. H. Lamb
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695-7905.
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Abstract

Ni removal from Si wafers by low-pressure UV/Cl2 chemical vapor cleaning (CVC) was investigated at substrate temperatures of 150–200°C. Sub-monolayer Ni coverages were applied to Si(100) by ultrahigh-vacuum physical vapor deposition (UHV-PVD). The Ni surface concentration was reduced to the Auger electron spectroscopy (AES) detection limit by a 2-min UV/Cl2 exposure at 300 mTorr and 200°C. AES depth profiling revealed that Ni was not contained within nor buried beneath the chlorosilyl layer formed by UV/Cl2 CVC. In contrast, Ni was not removed under similar conditions from Si surfaces covered by a thin UV/air oxide layer. These results indicate that Ni removal from Si occurs by a photochemical etching mechanism and not by direct volatilization of NiCl2. Atomic force microscopy (AFM) of Si surfaces after UV/Cl2 CVC indicated that Si etching was limited ˜20 å and that the surface was smooth (RMS roughness = 1.6 å).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 487
Copyright
Copyright © Materials Research Society 1997

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References

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