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The Microchemistry of the SiO2/Silicon Interface

Published online by Cambridge University Press:  28 February 2011

C.R. M-Grovenor
C.R. M-Grovenor*
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford OX1 3PH.
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Abstract

This paper deals with the chemical microanalysis of the Si02/si terface by Pulsed Laser Atom Probe (PLAP). The PLAP technique is briefly described, emphasizing its unique advantages in the study of the chemistry of interfaces. A transition oxide layer of stoichiometry SiO has been identified by PLAP analyses of the Si02/S' interface in thermal and anodic oxides. Simple models of the structure of the interface incorporating this SiO layer are presented, and the possible role of this layer during oxidation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 301
Copyright
Copyright © Materials Research Society 1986

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References

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