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Mechanical Properties of Ga1–xInxAs

Published online by Cambridge University Press:  28 February 2011

S. Guruswamy ,
J.P. Hirth  and
K.T. Faber
S. Guruswamy
Affiliation:
Department of Ceramic Engineering, The Ohio State University, Columbus, OH 43210
J.P. Hirth
Affiliation:
Department of Metallurgical Engineering, The Ohio State University, Columbus, OH 43210
K.T. Faber
Affiliation:
Department of Ceramic Engineering, The Ohio State University, Columbus, OH 43210
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Abstract

Substantial solid solution strengthening of GaAs by In acting as InAs4 units has recently been predicted. This strengthening could account for the reduction of dislocation density in GaAs single crystals grown from the melt. High temperature hardness measurements up to 700ºC have been carried out on (100) GaAs and Ga0.9975 In0.0025 As wafers. Results show a significant strengthening effect in In—doped GaAs even at concentration levels of about 0.2 wt%. A temperature independent flow stress region is observed for both these alloys. The In—doped GaAs shows ahigher plateau stress level compared to the undoped GaAs. The results are consistent with the solid solution strengthening model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 329
Copyright
Copyright © Materials Research Society 1986

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References

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