Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-25T00:47:48.323Z Has data issue: false hasContentIssue false

Mass Transport, Faceting and Behavior of Dislocations in GaN

Published online by Cambridge University Press:  03 September 2012

S. Nitta
Affiliation:
Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
T. Kashima
Affiliation:
Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
M. Kariya
Affiliation:
Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
Y. Yukawa
Affiliation:
Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
S. Yamaguchi
Affiliation:
High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya 468-8502, Japan
Get access

Abstract

The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986)Google Scholar
2. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
3. Lester, S. D., Ponce, F. A., Craford, M. G. and Steigerwald, D. A., Appl. Phys. Lett. 69, 898 (1996)Google Scholar
4. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A. A., Jpn. J. Appl. Phys. 36, L899 (1997).Google Scholar
5. Nam, O.-H., Bremser, M. D., Zheleva, T. S. and Davis, R. F., Appl. Phys. Lett. 71, 2638 (1997)Google Scholar
6. Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M. and Davis, R. F., Mater. Res. Soc. Internet J. Nitride Semicond. Res. 4S1, G3. 38 (1999).Google Scholar
7. Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I., Jpn. J. Appl. Phys. 37, L316 (1998).Google Scholar
8. Liau, Z. L. and Walpole, J. N., Appl. Phys. Lett. 40 (7), 568 (1982).Google Scholar
9. Chen, T. R., Chiu, L. C., Hasson, A., Yu, K. L., Koren, U., Margalit, S. and Yativ, A., J. Appl. Phys. 54 (5), 2407 (1983).Google Scholar
10. Kito, M., Otsuka, N., Nakamura, S., Ishino, M. and Matsui, Y., IEEE Photon. Technol. Lett., 8, 1299 (1996)Google Scholar
11. Imada, M., Ishibashi, T. and Noda, S., Jpn. J. Appl. Phys. 37, L1400 (1998).Google Scholar
12. Ogawa, T., Akabori, M., Motohisa, J. and Fukui, T., Jpn. J. Appl. Phys. 38, 1040 (1999)Google Scholar
13. Nitta, S., Kariya, M., Kashima, T., Yamaguchi, S., Amano, H. and Akasaki, I., Proc. 3rd Intern. Symp. on Control of Semiconductor Interface, Karuizawa, Japan, (1999).Google Scholar
14. Liau, Z. L. and Zeiger, H. J., J. Appl. Phys. 67 (5), 2434 (1990).Google Scholar
15. Kato, Y., Kitamura, S., Hiramatsu, K. and Sawaki, N., J. Crystal Growth 144, 133 (1994)Google Scholar
16. Kitamura, S., Hiramatsu, K. and Sawaki, N., Jpn. J. Appl. Phys. 34, L1184 (1995).Google Scholar
17. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71, 2259 (1997); A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 73, 481 (1998)Google Scholar