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The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials

  • A. S. Jordan (a1) and V. Swaminathan (a2)

Abstract

The thermo-mechanical properties of III-V semiconductors, in general, and of GaAs and InP in particular, are reviewed. They play an important role in many aspects of semiconductor device fabrication starting from the growth of bulk crystals. Dislocation generation in GaAs and InP are discussed with the emphasis on the theoretical and experimental aspects of reducing the dislocation density in these materials. Such mechanical properties as glide systems, critical resolved shear stress and impurity hardening are covered. The effects of dislocations on device performance are illustrated with examples from photonic and electronic devices. Finally, the effect of thermomechanical stresses in the degradation and reliability of GaAs/AlGaAs and InP/InGaAsP based opto-electronic devices is considered.

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1. Swarninathan, V. and Copley, S. M., J. Am. Ceram. Soc. 58, 482 (1975).
2. Brown, G. T., Cockayne, B. and MacEwan, W. R., J. Mat. Sci. 15, 1469 (1980).
3. Laister, D. and Jenkins, G. M., J. Mat. Science, 8, 1218 (1973).
4. Brasen, D. and Bonner, W. A., J. Mat. Science, 61, 167 (1983).
5. Brown, G. T., Cockayne, B., MacEwan, W. R. and Ashen, D. J., J. Mat. Sci. Lett. 2, 667 (1983).
6. Muller, G., Rupp, R., Voelkl, J., Wolf, H. and Blum, W., J. Cryst. Growth, 71, 771 (1985).
7. Alexander, H. and Haasen, p., in Solid State Phys., eds. Seitz, F. and Turnbull, D., Vol. 22, (Academic, New York, 1968), p. 27.
8. Schmid, E. and Boas, W. “Kristallplastizitat.” (1935), English edition, “Plasticity of Crystals”. (F. A. Hughes and Company, Ltd., London, 1950).
9. Guruswamy, S., Rai, R. S., Faber, K. T. and Hirth, J. P., J. Appl. Phys. 62, 4130 (1987).
10. Guruswamy, S., Rai, R. S., Faber, K. T., Hirth, J. P., Clemans, J.E., McGuigan, S., Thomas, R.N., and Mitchel, W., J. Appl. Phys. 65, 2508 (1989).
11. Sazhin, N. P., Milvidskii, M. G., Osvenskii, V. B. and 0. Stolyarov, G., Soy. Phys. Solis State 8, 1223 (1966).
12. Osvenskii, V. B., Stolyarov, G. G. and Milvidskii, M. G., Sov. Phys. Solid State 10, 2540 (1969).
13. Ninomiya, T., J. de Physique, 40, Colloq. C6, 143 (1979).
14. Brown, G. T., Cockayne, B. and MacEwan, W. R., J. Cryst. Growth, 51, 369 (1981).
15. Volkl, J., Muller, G. and Blum, W., J. Cryst. Growth, 83,383 (1987).
16. Ehrenreich, H. and Hirth, J. P., Appl. Phys. Lett. 46, 668 (1985).
17. Mutaftschiev, B., in Dislocation in Solids, ed. Nabarro, F. R. N., Vol. 5, (North-Holland, Amsterdam, 1980), p. 59.
18. Brice, J. C. and King, G. D., Nature 209, 1346 (1966).
19. Brice, J. C., J. Cryst. Growth 7, 9 (1970).
20. Holmes, D. E., Chen, R. T., Elliot, K. R. and Kirkpatrick, C. G., Appl. Phys. Lett. 40, 46 (1982).
21. Ta, L. B., Hobgood, H. M., Rohatgi, A. and Thomas, R. N., J. Appl. Phys. 53, 5771 (1982).
22. Lagowski, J., Gatos, H. C., Aoyama, T. and Lin, D. C., Appl. Phys. Lett. 45, 680 (1984).
23. Jordan, A. S., Caruso, R. and VonNeida, A. R., Bell Syst. Tech. J. 59, 593 (1980).
24. Gault, W. A., Monberg, E. M. and Clemans, J. E., J. Cryst. Growth 74, 491 (1986); see also J. E. Clemens, W. A. Gault, and E. M. Monberg, AT&T Tech. J., 65,86 (1986).
25. Jordan, A. S. and Monberg, E. M., unpublished.
26. Roedel, R. J., A. R. Von Neida, Caruso, R. and Dawson, L. R., J. Electrochem. Soc. 126, 637 (1979).
27. DeLoach, B. C., Hakki, B. W., Hartman, R. L. and D'Asaro, L. A., Proc. IEEE 61, 1042 (1973).
28. Petroff, P. M. and Hartman, R. L., Appl. Phys. Lett. 23, 469 (1973).
29 Anthony, P. J., Hartman, R. L., Schumaker, N. E. and Wagner, W. R., J. Appl. Phys. 53,756 (1982).
30. Nanishi, Y., Ishida, S., Honda, T., Yamazaki, H. and Miyazawa, S., Japan J. Appl. Phys. 21, L335 (1982).
31. Miyazawa, S. and Nanishi, Y., Japan J. Appl. Phys. 22 Suppl. 22–1, 419 (1983).
32. Nanishi, Y., Ishida, S. and Miyazawa, Y., Japan J. Appl. Phys. 22, L54 (1983).
33. Olsen, G. H. and Ettenberg, M., J. Appl. Phys. 48, 2543 (1977).
34. Wakefield, B., J. Appl. Phys. 50, 7914 (1979).
35. Robertson, M. J., Wakefield, B. and Hutchinson, P., J. Appl. Phys. 52, 4462 (1981).
36. Swaminathan, V., Lopata, J. and Lee, J. W., Mat. Res. Soc. Symp. Proc. 77, 779 (1987).
37. Hartman, R. L. and Hartman, A. R., Appl. Phys. Lett. 23, 147 (1973).
38. Swaminathan, V., Wagner, W. R., Anthony, P. J., Henein, G. and Koszi, L. A., J. Appl. Phys. 54, 3763 (1983).
39. Elliot, C. R., Regnault, J. C. and Wakefield, B., Inst. Phys. Conf. Ser. 65, 553 (1983).
40. Thompson, A., IEEE J. Quant. Elect. QE-15, 11(1979).
41. Peek, J.A.F., IEEE J. Quant. Elect. QE-17, 781(1981).
42. Swaminathan, V., Parayanthal, P. and Hartman, R. L., Appl. Phys. Lett. 52, 1461 (1988).
43. Koyama, H., Nishioka, T., Isshiki, K., Namizaki, H., and Kawazu, S., Appl. Phys. Lett. 43, 733 (1983).
44. Chin, A. K., DiGiuseppe, M. A. and Bonner, W. A., Mat. Lett. 1, 19 (1982).
45. Swaminahan, V., Koszi, L. A. and Focht, M. W., Mat. Res. Soc. Symp. Proc. 184, 199 (1990).
46. Ikeda, M., 0. Ueda, Komiya, S. and Umebu, I., J. Appl. Phys. 58, 2448 (1985).

The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials

  • A. S. Jordan (a1) and V. Swaminathan (a2)

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