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Integration of PLZT and BST Family Oxides with GaN.

  • Andrei V. Osinsky (a1), Vladimir N. Fuflyigin (a1), Feiling Wang (a1), Peter I. Vakhutinsky (a1) and Peter E. Norris (a1)...

Abstract

Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 [.proportional]m by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5.10−8 A/cm2.

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References

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1. Davydov, A., Anderson, T.J., in III-V Nitride Materials and Processes, edited by Moustakas, T.D., Proc. volume 98–18 (Boston, MA, 1998), in press
2. Fuflyigin, V., Li, K.K., Wang, F., Jiang, H., Liu, S., Zhao, J., Norris, P., Yip, P., in High-Temperature Superconductors and Novel Inorganic Materials, edited by Tendeloo, G. Van, (Kluwer Academic.Publ. 1999), p.279284
3. Fuflyigin, V., Osinsky, A., Wang, F. to be published in Applied Physics Letters.
4. Wang, F., Furman, E., Haertling, G.H., J.Appl.Phys. 78, 9 (1995)

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