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HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates

Published online by Cambridge University Press:  03 September 2012

Olivier Parillaud ,
Volker Wagner ,
Hans-Jörg Bühlmann ,
François Lelarge  and
Marc Ilegems
Olivier Parillaud
Affiliation:
Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Volker Wagner
Affiliation:
Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Hans-Jörg Bühlmann
Affiliation:
Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
François Lelarge
Affiliation:
Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
Marc Ilegems
Affiliation:
Institut de Micro- et Optoélectronique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Abstract

We present preliminary results on gallium nitride growth by HVPE on C-plane sapphire with 2, 4 and 6 degrees misorientation towards M and A directions. A nucleation GaN buffer layer is deposited prior the growth by MOVPE. Surface morphology and growth rates are compared with those obtained on exact C-plane oriented sapphire, for various growth conditions. As expected, the steps already present on the substrate surface help to initiate a directed step-flow growth mode. The large hillocks, which are typical for HVPE GaN layers on (0001) sapphire planes, are replaced by more or less parallel macro-steps. The width and height of these steps, due to step bunching effect, depend directly on the angle of misorientation and on the growth conditions, and are clearly visible by optical or scanning electron microscopy. Atomic force microscopy and X-ray diffraction measurements have been carried out to quantify the surface roughness and crystal quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.13
Copyright
Copyright © Materials Research Society 1999

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