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High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays

Published online by Cambridge University Press:  03 September 2012

J.D. Brown
Affiliation:
Department of Physics – Box 8202North Carolina State University Raleigh, NC 27695-8202
J. Matthews
Affiliation:
Department of Physics – Box 8202North Carolina State University Raleigh, NC 27695-8202
S. Harney
Affiliation:
Department of Physics – Box 8202North Carolina State University Raleigh, NC 27695-8202
J. Boney
Affiliation:
Department of Physics – Box 8202North Carolina State University Raleigh, NC 27695-8202
J.F. Schetzina
Affiliation:
Department of Physics – Box 8202North Carolina State University Raleigh, NC 27695-8202
J.D. Benson
Affiliation:
Night Vision and Electronic Sensors Directorate 10221 Burbick Rd, St. 430 Fort Belvoir, VA 22060, USA
K.V. Dang
Affiliation:
Night Vision and Electronic Sensors Directorate 10221 Burbick Rd, St. 430 Fort Belvoir, VA 22060, USA
Thomas Nohava
Affiliation:
Honeywell Technology Center 12001 State Highway Plymouth, Minnesota 55441
Wei Yang
Affiliation:
Honeywell Technology Center 12001 State Highway Plymouth, Minnesota 55441
Subash Krishnankutty
Affiliation:
Honeywell Technology Center 12001 State Highway Plymouth, Minnesota 55441
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Abstract

Visible-blind UV cameras based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Output from the UV cameras were recorded at room temperature at frame rates of 30-240 Hz. These new visible-blind digital cameras are sensitive to radiation from 285-365 nm in the UV spectral region.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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