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Growth of InN by MBE

Published online by Cambridge University Press:  03 September 2012

W.-L. Chen ,
R. L. Gunshor ,
Jung Han ,
K. Higashimine  and
N. Otsuka
W.-L. Chen
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907
R. L. Gunshor
Affiliation:
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907
Jung Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
K. Higashimine
Affiliation:
Japan Advanced Institute of Science and Technology, Ishikawa, Japan
N. Otsuka
Affiliation:
Japan Advanced Institute of Science and Technology, Ishikawa, Japan
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Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.30
Copyright
Copyright © Materials Research Society 1999

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