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Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures

  • A. Michel (a1), D. Hanser (a2), R.F. Davis (a2), D. Qiao (a3), S.S. Lau (a3), L.S. Yu (a3), W. Sun (a3) and P. Asbeck (a3)...

Abstract

Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ∼2×1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-μS compared to a sheet conductance of 20-μS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.

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