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Electrical Characterization of Ultra-Thin Oxides Grown on Silicon Surfaces Cleaned in Ultra-High Vacuum
Published online by Cambridge University Press: 10 February 2011
Abstract
We have investigated the oxidation of clean reconstructed silicon surfaces in-situ using a fourpoint probe technique. The measured conductance variations, on Si(111) and Si(100) surfaces as a function of oxygen exposure are markedly different. On Si(100) surfaces, the conductance displays a rapid fall during the first 100 L exposure to O2, followed by a slower steady decrease at higher oxygen exposures. This behavior is similar for both n-type arid p-type silicon. The conductance of Si(111) surfaces increases significantly at the onset of the oxidation. This conductance increase is found on both n-type and p-type Si(111) samples. We interpret this as being due to the molecular precursor which is known to form in the peroxy bridge position.
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- Copyright © Materials Research Society 1997