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The Effects of Implanted Nitrogen on Diffusion of Boron and Evolution of Extended Defects

Published online by Cambridge University Press:  15 February 2011

Heemyong Park ,
Vida Ilderem ,
Craig Jasper ,
Mike Kaneshiro ,
Jim Christiansens  and
Kevin S. Jones
Heemyong Park
Affiliation:
Motorola, Advanced Custom Technologies, 2200 W. Broadway Rd., MD M350, Mesa, AZ 85202.
Vida Ilderem
Affiliation:
Motorola, Advanced Custom Technologies, 2200 W. Broadway Rd., MD M350, Mesa, AZ 85202.
Craig Jasper
Affiliation:
Motorola, Advanced Custom Technologies, 2200 W. Broadway Rd., MD M350, Mesa, AZ 85202.
Mike Kaneshiro
Affiliation:
Motorola, Advanced Custom Technologies, 2200 W. Broadway Rd., MD M350, Mesa, AZ 85202.
Jim Christiansens
Affiliation:
Motorola, MRST, 2200 W. Broadway Rd. MD M360, Mesa, AZ 85202.
Kevin S. Jones
Affiliation:
University of Florida, Department of Materials Science and Engineering, 219 Rhines Hall, Gainesville, FL 32611.
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Abstract

We studied effects of nitrogen on reduction of boron diffusion in BF2-implanted source/drain regions of a p-channel MOSFET. Evolution of extended defects induced by nitrogen implantation in silicon and its dependence on implant energy were investigated. Characterization with TEM and SIMS led to validation of models of nitrogen as interstitial traps and strain-induced gettering. Electrical measurement of the PMOS threshold voltage shows a consistent trend of the nitrogen effects on boron redistribution in the S/D regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 425
Copyright
Copyright © Materials Research Society 1997

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References

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