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DLTS: A Promising Technique for Understanding the Physics and Engineering of the Point Defects in Si and III-V Alloys

Published online by Cambridge University Press:  01 February 2011

Aurangzeb Khan  and
Masafumi Yamaguchi
Aurangzeb Khan
Affiliation:
akhan@usouthal.edu, University of South Alabama, Electrical Engineering, 307 university Blvd, ECEB51, Mobile, AL 36688, Mobile, AL, 36688, United States, 2514606923
Masafumi Yamaguchi
Affiliation:
masafumi@toyota-ti.jp, Toyota Technological Institute, Nagoya, N/A, Japan
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Abstract

Deep level transient spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels introduced intentionally or occurring naturally in semiconductor materials and complete devices. DLTS has the advantage over all the techniques used to-date in that it fulfils almost all the requirements for a complete characterization of a deep centre and their correlation with the device properties. In particular the method can determine the activation energy of a deep level, its capture cross-section and concentration and can distinguish between traps and recombination centers.

In this invited paper we provide an overview of the extensive R & D work that has been carrier out by the authors on the identification of the recombination and compensator centers in Si and III-V compound materials for space solar cells. In addition, we present an overview of key problems that remain in the understanding of the role of the point defects and their correlation with the solar cell parameters.

Keywords

deep level transient spectroscopy (DLTS)defectsphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F07-05
Copyright
Copyright © Materials Research Society 2007

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