Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-24T21:27:51.390Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Contribution to the Photoluminescence from Embedded Germanium Nanocrystals Prepared by Ion Implantation and Sputter Deposition Methods

Published online by Cambridge University Press:  01 February 2011

Pravat Kr Giri ,
Kaustuv Das  and
Samit K Roy
Pravat Kr Giri
Affiliation:
giri@iitg.ernet.in, Indian Institute of Technology, Physics, Department of Physics, I.I.T. Guwahati, Guwahati, 781039, India, 00913612582703, 00913612582749
Kaustuv Das
Affiliation:
kaustuv@phy.iitkgp.ernet.in, Indian Institute of Technology Kharagpur, Department of Physics and Meteorology, Kharagpur, 721302, India
Samit K Roy
Affiliation:
physkr@phy.iitkgp.ernet.in, Indian Institute of Technology Kharagpur, Department of Physics and Meteorology, Kharagpur, 721302, India
Get access

Abstract

In this work, we present a comparative study of vibrational and luminescent properties of Ge nanocrystals (NCs) prepared by ion implantation (Process I) and radio frequency (RF) sputter deposition techniques (Process II). Optical Raman studies reveal presence of strain in the Ge NCs embedded in SiO2 in both cases. Polarization dependent Raman scattering studies show that process I yields NCs with surface symmetrical Raman modes only, whereas process II yields additional surface quadrupolar Raman modes. Photoluminescence studies using 488 nm excitation show broad PL emissions peaked at ∼2.3 in all the samples with varying intensities. PL studies on Ar implanted and similarly annealed SiO2 layers confirm that 2.3 eV emission is originated from oxygen deficient defects in the SiO2 matrix. PL studies with 325 nm excitation show additional strong peaks at higher energies, which are believed to be due to Ge/O interface defects. It is concluded that room temperature visible light emission from embedded Ge NCs is primarily dominated by the oxygen deficient defects in SiOx matrix and non-bridging oxygen surrounding the Ge NCs, while light emission due to quantum confined carriers in the NCs are quenched perhaps due to inherent strain in the embedded NCs.

Keywords

nanostructureluminescenceRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F04-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Min, K. S., Shcheglov, K. V., Yang, C. M., Atwater, H. A., Brongersma, M. L., Polman, A., Appl. Phys. Lett. 68, 2511 (1996).Google Scholar
2. Zacharias, M. and Fauchet, P. M., Appl. Phys. Lett. 71, 380 (1997).Google Scholar
3. Wu, X. L., Gao, T., Siu, G. G., Tong, S., Bao, X. M., Appl. Phys. Lett. 74, 2420 (1999).Google Scholar
4. Duval, E., Boukenter, A., and Champagnon, B., Phys. Rev. Lett. 56, 2052 (1986).Google Scholar
5. Tanaka, A., Onari, S., and Arai, T., Phys. Rev. B 47, 1237 (1993).Google Scholar
6. Yadav, H. K., Gupta, V., Sreenivas, K., Singh, S. P., Sundarakannan, B., and Katiyar, R. S., Phys. Rev. Lett. 97, 085502 (2006).Google Scholar
7. Cheng, W., Ren, S., and Yu, P. Y., Phys. Rev. B 68, 193309 (2003).Google Scholar
8. Giri, P. K., Kesavamoorthy, R., Panigrahi, B.K. and Nair, K.G. M., Solid State Comm. 136, 36 (2006).Google Scholar
9. Wu, X. L., Gao, T., Bao, X.M., Yan, F., Jiang, S.S., and Feng, D., J. Appl. Phys. 82, 2704 (1997).Google Scholar
10. Ovsyuk, N. N., Gorokhov, E. B., Grischenko, V. V., and Shebanin, A. P., JETP Lett. 47, 298 (1988).Google Scholar
11. Ginzburg, L. P., Gordeev, A. A., Gorchakov, A. P., and Jilinsky, A. P., J. Non-Crys. Solids 183, 234 (1995).Google Scholar