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Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structures

Published online by Cambridge University Press:  03 September 2012

G. Dang ,
X. A. Cao ,
F. Ren ,
S. J. Pearton ,
J. Han ,
A. G. Baca ,
R. J. Shul  and
R. G. Wilson
G. Dang
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
X. A. Cao
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, USA
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185, USA
A. G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185, USA
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185, USA
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch CA 91381, USA
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Abstract

Different ions (Ti+, O+, Fe+, Cr+) were implanted at multiple energies into GaN field effect transistor structures (n and p-type). The implantation was found to create deep states with energy levels in the range EC –0.20 to 0.49 eV in n-GaN and at EV +0.44 eV in p-GaN after annealing at 450-650 oC. The sheet resistance of the GaN was at a maximum after annealing at these temperatures, reaching values of ∼4×1012 Ω/⊏ in n-GaN and ∼1010 Ω/⊏ in p-GaN. The mechanism for the implant isolation was damage-related trap formation for all of the ions investigated, and there was no evidence of chemically induced isolation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.68
Copyright
Copyright © Materials Research Society 1999

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