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Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

Z-Q. Fang ,
D. C. Look ,
Wook Kim  and
H. Morkoç
Z-Q. Fang
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, OH 45435
D. C. Look
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, OH 45435
Wook Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
H. Morkoç
Affiliation:
Electrical Engineering and Physics Department, Virginia Commonwealth University, P. O. Box 843072, Richmond, Virginia 23284-3072
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Abstract

Deep centers in Si-doped n-GaN samples grown on sapphire by reactive molecular beam epitaxy, using different ammonia flow rates (AFRs), have been studied by deep level transient spectroscopy. In addition to five electron traps, which were also found in n-GaN layers grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy, two new centers C1 (0.43-0.48 eV) and E1 (0.25 eV) have been observed. C1, whose parameters show strong electric-field effects and anomalous electron capture kinetics, might be associated with dislocations. E1, which is very dependent on the AFR, exhibits an activation energy close to that of a center created by electron irradiation and is believed to be a defect complex involving VN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.84
Copyright
Copyright © Materials Research Society 1999

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