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Capping Techniques for Zone-Melting-Recrystallized Si-On-Insulator Films

Published online by Cambridge University Press:  28 February 2011

C.K. Chen ,
L. Pfeiffer ,
K.W. West ,
M.W. Gels ,
S. Darack  and
G. Achaibar
C.K. Chen
Affiliation:
R. W. Mountain, and B-Y. Tsaur, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073. *AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. Pfeiffer
Affiliation:
R. W. Mountain, and B-Y. Tsaur, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073. *AT&T Bell Laboratories, Murray Hill, New Jersey 07974
K.W. West
Affiliation:
R. W. Mountain, and B-Y. Tsaur, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073. *AT&T Bell Laboratories, Murray Hill, New Jersey 07974
M.W. Gels
Affiliation:
R. W. Mountain, and B-Y. Tsaur, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073. *AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. Darack
Affiliation:
R. W. Mountain, and B-Y. Tsaur, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073. *AT&T Bell Laboratories, Murray Hill, New Jersey 07974
G. Achaibar
Affiliation:
R. W. Mountain, and B-Y. Tsaur, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-0073. *AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

To prepare silicon-on-insulator (SOI) films by graphite-strip-heater zone-melting recrystallization (ZMR), a capping technique must be used to insure wetting by the molten Si zone. We have demonstrated two new capping techniques that result in reproducible wetting without degrading the crystallographic texture of the recrystallized film: annealing SiO2- capped Si films in NH3 and depositing two SiNx layers with carefully controlled compositions on the SiO2 capping layer. Wetting is promoted by the incorporation of trace amounts of nitrogen at the Si-SiO2 interface. Both N implantation experiments and Auger spectroscopy studies establish that the presence of less than a monolayer of nitrogen at this interface is sufficient to insure wetting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 53
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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