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TEM Study of Bulk AlN Growth by Physical Vapor Transport

Published online by Cambridge University Press:  03 September 2012

W.L. Sarney ,
L. Salamanca-Riba ,
T. Hossain ,
P. Zhou ,
H.N. Jayatirtha ,
H.H. Kang ,
R.D. Vispute ,
M. Spencer  and
K.A. Jones
W.L. Sarney
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
L. Salamanca-Riba
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
T. Hossain
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, D.C.
P. Zhou
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, D.C.
H.N. Jayatirtha
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, D.C.
H.H. Kang
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
R.D. Vispute
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD
M. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, D.C.
K.A. Jones
Affiliation:
U.S. Army Research Laboratory, Adelphi, MD
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Abstract

We are attempting to grow bulk AlN that would be suitable as a substrate for nitride film growth. Bulk AlN films were grown by physical vapor transport on 3.5° offaxis and on-axis 6H SiC seed crystals and characterized by TEM, x-ray-diffraction, Auger electron microscopy, and SEM. TEM images show that the bulk AlN does not have the columnar structure typically seen in AlN films grown by MOCVD. Although further optimization is required before the bulk AlN is suitable as a substrate, we find that the structural characteristics achieved thus far indicate that quality bulk AlN substrates may be obtained in the future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W5.5
Copyright
Copyright © Materials Research Society 1999

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References

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