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Simulations of Defect-Interface Interactions in GaN

Published online by Cambridge University Press:  03 September 2012

J. A. Chisholm  and
P. D. Bristowe
J. A. Chisholm
Affiliation:
Department of Materials Science and Metallurgy University of Cambridge Pembroke Street Cambridge CB2 3QZ, United Kingdom
P. D. Bristowe
Affiliation:
Department of Materials Science and Metallurgy University of Cambridge Pembroke Street Cambridge CB2 3QZ, United Kingdom
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Abstract

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 20) IDB and the (10 10) SMB and consequently alter the electronic structure of these boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.72
Copyright
Copyright © Materials Research Society 1999

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