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Particulate Removal from Silicon Substrates in Megasonic-Assisted Dilute SC1 Chemistry

Published online by Cambridge University Press:  10 February 2011

Ismail Kashkoush
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr., #150, Allentown, PA 18106
Eric Brause
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr., #150, Allentown, PA 18106
Robert Grant
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr., #150, Allentown, PA 18106
Rich Novak
Affiliation:
SubMicron Systems Corporation, 6330 Hedgewood Dr., #150, Allentown, PA 18106
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Abstract

This paper demonstrates the use of megasonic energy to enhance particulate removal in dilute SC1 solutions. Ideal, as well as “real world”, particles were deposited on silicon wafers to challenge the SCl/megasonic particle removal system. Different dilute SCI concentrations were used, e.g., 1:4:20, 1:10:120, and 1:1:100. Bath temperature was varied between 50 and 70°C with megasonic energy kept constant at 800 W. Results showed that the megasonic energy enhanced the particle removal even in dilute solutions. The chemical concentrations were shown to be a significant factor and must be monitored or controlled in dilute SC1 solutions for particle removal to take place. A lower cost of ownership can be obtained from these techniques as a result of using dilute chemicals and extending current bath lives.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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