Hostname: page-component-84b7d79bbc-7nlkj Total loading time: 0 Render date: 2024-07-28T04:23:16.089Z Has data issue: false hasContentIssue false

Improved Rinse Quench for a more Uniform Etch of Thermal Oxide in Buffered Oxide Etch (BOE)

Published online by Cambridge University Press:  10 February 2011

T. B. Parry*
Affiliation:
R & D Department, SCP Global Technologies, 400 N Benjamin Ln., Boise, ID 83704
Get access

Abstract

An improved method for quenching a Buffered Oxide Etch (BOE) process in a DI water overflow rinse tank is shown. Many different factors were investigated in several preliminary experiments. Most of these factors were thought to influence etch uniformity yet proved not to be significant. The transfer process from chemical to rinse was identified as contributing negatively to etch uniformity. A chemical carryover layer formed during the transfer process was identified as the most significant factor. The hydrodynamics of liquids are outlined to help explain how the carryover layer is formed and shaped. Several sensitivity analysis experiments show transfer speeds to significantly affect carryover layer thickness and uniformity. Slow transfer speeds are determined to produce consistent and improved uniformity. Results of a follow up experiment quantify the uniformity improvement.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, Volume 1 – Process Technology (Lattice Press, Sunset Beach, California, 1986), pp. 529.Google Scholar
2. Rosato, J.J., Walters, R.N., Hall, R.M., Lindquist, P.G., Spearow, R.G., and Helms, C.R. in Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by Ruzyllo, J. and Novack, R., (Electrochemical Society 184th Meeting 94–7, Pennington, NJ, 1993) pp. 94. “Studies of Rinse Efficiencies in Wet Cleaning Tools”Google Scholar
3. Tonti, A. in Proceedings of the Second International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by Ruzyllo, J. and Novack, R., (Electrochemical Society Proceedings 92–12, Pennington, NJ, 1992) pp. 41 Google Scholar
4. Kashkoush, I., Novak, R., Rajaram, B., and Carrillo, F. in Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing IV, edited by Novak, R.E., Ruzyllo, J. (Electrochemcial Society Proceedings 95–20, Pennington, NJ, 1996) pp. 429435.Google Scholar
5. Hall, R.M., Jarvis, T. D. (private Communication)Google Scholar