Hostname: page-component-cc8bf7c57-l9twb Total loading time: 0 Render date: 2024-12-10T08:49:52.394Z Has data issue: false hasContentIssue false

Fabrication and Characterization of InGaN Nano-scale Dots for Blue and Green LED Applications

Published online by Cambridge University Press:  03 September 2012

K.S. Kim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.-H. Hong
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
W.-H. Lee
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.S. Kim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
O.H. Cha
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
G.M. Yang
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
E.-K. Suh
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
K.Y. Lim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
H.J. Lee
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
H.K. Cho
Affiliation:
Department of Materials Science and Engineering, KAIST, 373-1 Kusong-Dong, Yusong-gu, Taejon 305-701, Korea
J.Y. Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, 373-1 Kusong-Dong, Yusong-gu, Taejon 305-701, Korea
J.M. Seo
Affiliation:
Department of Science and Technology, Chonbuk National University, Chonju 561-756, Korea
Get access

Abstract

Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Jpn. J. Appl. Phys. Lett. 36, L1059 (1997).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Umomoto, H., Sano, M., and Chocho, K., Appl. Phys. Lett. 72, 211 (1998).Google Scholar
3. Keller, S., Keller, B.P., Minsky, M.S., Bowers, J.E., Mishra, U.K., DeenBaars, S.P., Seifert, W., J. Cryst. Growth, 189/190, 29 (1998).Google Scholar
4. Liu, W., Teo, K.L., Li, M.F., Chua, S.J., Uchida, K., Tokunaga, H., Akutsu, N., Matsumoto, K., J. Cryst. Growth, 189/190, 648 (1998).Google Scholar
5. Takeuchi, T., Sota, S., Sakai, H., Amanoa, H., Akasaki, I., Kaneko, Y., Nakagawa, S., Yamaoka, Y., Yamada, N., J. Cryst. Growth, 189/190, 616 (1998).Google Scholar
6. Hiramatsu, K., Kawaguchi, Y., Shimizu, M., Sawaki, N., Zheleva, T., Davis, R.F., Tsuda, H., Taki, W., Kuwano, N., Oki, K., MRS Internet J. Nitride Semicond. Res. 2, 6 (1997).Google Scholar
7. Marzin, J.-Y. and Bastard, G., Solid State Commun. 92, 437 (1994).Google Scholar
8. Jiang, H. and Singh, J., Phys. Rev. B 56, 4696 (1997).Google Scholar
9. Mo, Y.-W., Savage, D.E., Swartzentruber, B.S., and Lagally, M.G., Phys. Rev. Lett. 65, 1020 (1990).Google Scholar
10. Lobo, C. and Leon, R., J. Appl. Phys. 83, 4168 (1998).Google Scholar
11. Pankove, J.I., Optical processes in semiconductors, (Dover publication Inc., NY. 1971) p. 120.Google Scholar