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The Effect of Al in Plasma-Assisted MBE-Grown GaN

Published online by Cambridge University Press:  03 September 2012

Otto Zsebök ,
Jan V. Thordson ,
Qingxiang Zhao ,
Ulf Södervall ,
Lars Ilver  and
Thorvald G. Andersson
Otto Zsebök
Affiliation:
Applied Semiconductor Physics Department of Microelectronics and Nanoscience Physics and Engineering PhysicsChalmers University of Technology and Göteborg UniversitySE-412 96 Göteborg, Sweden
Jan V. Thordson
Affiliation:
Applied Semiconductor Physics Department of Microelectronics and Nanoscience Physics and Engineering PhysicsChalmers University of Technology and Göteborg UniversitySE-412 96 Göteborg, Sweden
Qingxiang Zhao
Affiliation:
Applied Semiconductor Physics Department of Microelectronics and Nanoscience Physics and Engineering PhysicsChalmers University of Technology and Göteborg UniversitySE-412 96 Göteborg, Sweden
Ulf Södervall
Affiliation:
Applied Semiconductor Physics Department of Microelectronics and Nanoscience Physics and Engineering PhysicsChalmers University of Technology and Göteborg UniversitySE-412 96 Göteborg, Sweden
Lars Ilver
Affiliation:
Applied Semiconductor Physics Department of Microelectronics and Nanoscience Physics and Engineering PhysicsChalmers University of Technology and Göteborg UniversitySE-412 96 Göteborg, Sweden
Thorvald G. Andersson
Affiliation:
Applied Semiconductor Physics Department of Microelectronics and Nanoscience Physics and Engineering PhysicsChalmers University of Technology and Göteborg UniversitySE-412 96 Göteborg, Sweden
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Abstract

We have grown GaN, with addition of a 0.10 to 0.33 % Al, on sapphire(0001) substrates by solid-source RF-plasma assisted MBE. The Al-concentration was determined by secondary ion-mass spectrometry and Auger-electron spectroscopy, while the layer quality was assessed by photoluminescence and high-resolution scanning electron microscopy. Microscopy revealed a meandering pattern and a surface roughness varying with Al-content. The smallest surface roughness was obtained at 0.10 % Al. Photoluminescence revealed two main peaks attributed to the neutral donor-bound exciton. Its energy increased slightly with Al-concentration, which established a correlation between the Al-concentration and the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.36
Copyright
Copyright © Materials Research Society 1999

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