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Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

Published online by Cambridge University Press:  21 March 2011

Kazutoishi Kojima ,
Toshiyuki Ohno ,
Mituhiro Kushibe ,
Koh Masahara ,
Yuuki Ishida ,
Tetuo Takahashi ,
Takaya Suzuki ,
Tomoyuki Tanaka ,
Sadafumi Yoshida  and
Kazuo Arai
Kazutoishi Kojima
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan R&D Association for Future Electron Devices
Toshiyuki Ohno
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan R&D Association for Future Electron Devices
Mituhiro Kushibe
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan R&D Association for Future Electron Devices
Koh Masahara
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan R&D Association for Future Electron Devices
Yuuki Ishida
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Tetuo Takahashi
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Takaya Suzuki
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan R&D Association for Future Electron Devices
Tomoyuki Tanaka
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan R&D Association for Future Electron Devices
Sadafumi Yoshida
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Kazuo Arai
Affiliation:
Ultra-Low-Loss Power Device Technology Research Body (UPR), Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

Growth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated and D-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.2
Copyright
Copyright © Materials Research Society 2001

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References

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